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By 2030, the market for high electron mobility transistors (HEMTs) is anticipated to grow at a CAGR of 15.27% from 2022 to 2030, reaching a value of USD 16.86 billion.
Field effect transistors (FETs) of the High Electron Mobility Transistor (HEMT) type offer extremely low noise ratios and extremely high levels of efficiency in microwave frequency ranges. Gallium Arsenide (GaAs) and Aluminium Gallium Arsenide (AlGaAs) were two of the materials that were most frequently employed to make high electron mobility transistors. Because it has faster carrier drift velocities and mobilities than Si material and provides a high level of basic conductivity, gallium arsenide is frequently used. High-frequency electronics like cellphones, satellite TV receivers, power conversion equipment, and radar detection systems use high electron mobility transistors, which can operate at millimeter-wavelength frequencies. They are often used in low-power amplifiers, microwave receivers, and the aerospace and defence sectors. HEMTs are currently commonly used in semiconductor devices. RF design typically makes use of these Monolithic Microwave Integrated Circuit (MMIC) chips.
For instance, ROHM Semiconductor declared that the GNP1070TC-Z and GNP1150TCA-Z 650V GaN (Gallium Nitride) HEMTs will begin mass production in May 2023. These components were created with a variety of power supply system uses in mind. These ground-breaking products were created by Delta Electronics, Inc. and Ancora Semiconductors, Inc., a subsidiary that makes GaN devices.
Driving Factors
One of the key factors propelling the market growth for high electron mobility transistors is the increasing demand for efficient power systems and consumer electronics. GaN high electron mobility transistors are expected to have a sizable share of the global high electron mobility transistor market throughout the forecast period due to the advantages they have over competing materials like GaAs and SiC.
The unusually quick rise of these transistors was driven from the beginning by the enormous number of potential applications for these semiconductors. Electric vehicles, train engines, power distribution, and other applications requiring high voltage and high-frequency switching can all benefit from the use of gallium nitride (GaN) HEMT devices, which will reduce the cost of obtaining the dependable and economical transistors required in power electronics. Additionally, there will likely be chances for the worldwide high electron mobility transistor market to expand due to the expanding demand for novel high electron mobility transistor technologies in the aerospace, military, and automobile manufacturing sectors.
Restraining Factors
The absence of established methods for manufacturing and developing HEMT transistor devices, however, is anticipated to impede the market's expansion for high electron mobility transistors. The cost of microwave-integrated circuits and the performance of GAN HEMTs continue to be barriers to market implementation. Additionally, the increasing intensity of deterioration factors and the role of temperature in enhancing GAN HEMT loss remain unknown.
Report Coverage
Global High Electron Mobility Transistor (HEMT) research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global High Electron Mobility Transistor (HEMT) report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and High Electron Mobility Transistor (HEMT) competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key High Electron Mobility Transistor (HEMT) market players and analyses their core competencies in each global market sub-segments.
Key Points Covered in the Report
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global High Electron Mobility Transistor (HEMT) market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, High Electron Mobility Transistor (HEMT) market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
Ampleon, Mitsubishi Electric, Fujitsu, TOSHIBA, Infineon, Renesas Electronics, Cree, Qorvo, Microsemi, Wolfspeed, Lake Shore Cryotronics, ST Microelectronics, Texas Instruments, Oki Electric.
Primary Target Market
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2030. Spherical Insights has segmented the global High Electron Mobility Transistor (HEMT) market based on the below-mentioned segments:
Global High Electron Mobility Transistor (HEMT) Market, By Type
Global High Electron Mobility Transistor (HEMT) Market, By End User
Global High Electron Mobility Transistor (HEMT) market, Regional Analysis
Field effect transistors (FETs) of the High Electron Mobility Transistor (HEMT) type offer extremely low noise ratios and extremely high levels of efficiency in microwave frequency ranges. Gallium Arsenide (GaAs) and Aluminium Gallium Arsenide (AlGaAs) were two of the materials that were most frequently employed to make high electron mobility transistors. Because it has faster carrier drift velocities and mobilities than Si material and provides a high level of basic conductivity, gallium arsenide is frequently used. High-frequency electronics like cellphones, satellite TV receivers, power conversion equipment, and radar detection systems use high electron mobility transistors, which can operate at millimeter-wavelength frequencies. They are often used in low-power amplifiers, microwave receivers, and the aerospace and defence sectors. HEMTs are currently commonly used in semiconductor devices. RF design typically makes use of these Monolithic Microwave Integrated Circuit (MMIC) chips.
For instance, ROHM Semiconductor declared that the GNP1070TC-Z and GNP1150TCA-Z 650V GaN (Gallium Nitride) HEMTs will begin mass production in May 2023. These components were created with a variety of power supply system uses in mind. These ground-breaking products were created by Delta Electronics, Inc. and Ancora Semiconductors, Inc., a subsidiary that makes GaN devices.
Driving Factors
One of the key factors propelling the market growth for high electron mobility transistors is the increasing demand for efficient power systems and consumer electronics. GaN high electron mobility transistors are expected to have a sizable share of the global high electron mobility transistor market throughout the forecast period due to the advantages they have over competing materials like GaAs and SiC.
The unusually quick rise of these transistors was driven from the beginning by the enormous number of potential applications for these semiconductors. Electric vehicles, train engines, power distribution, and other applications requiring high voltage and high-frequency switching can all benefit from the use of gallium nitride (GaN) HEMT devices, which will reduce the cost of obtaining the dependable and economical transistors required in power electronics. Additionally, there will likely be chances for the worldwide high electron mobility transistor market to expand due to the expanding demand for novel high electron mobility transistor technologies in the aerospace, military, and automobile manufacturing sectors.
Restraining Factors
The absence of established methods for manufacturing and developing HEMT transistor devices, however, is anticipated to impede the market's expansion for high electron mobility transistors. The cost of microwave-integrated circuits and the performance of GAN HEMTs continue to be barriers to market implementation. Additionally, the increasing intensity of deterioration factors and the role of temperature in enhancing GAN HEMT loss remain unknown.
Report Coverage
Global High Electron Mobility Transistor (HEMT) research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global High Electron Mobility Transistor (HEMT) report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and High Electron Mobility Transistor (HEMT) competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key High Electron Mobility Transistor (HEMT) market players and analyses their core competencies in each global market sub-segments.
| REPORT ATTRIBUTES | DETAILS |
|---|---|
| Study Period | 2017-2030 |
| Base Year | 2020 |
| Forecast Period | 2022-2030 |
| Historical Period | 2017-2019 |
| Unit | Value (USD Billion) |
| Key Companies Profiled | Ampleon, Mitsubishi Electric, Fujitsu, TOSHIBA, Infineon, Renesas Electronics, Cree, Qorvo, Microsemi, Wolfspeed, Lake Shore Cryotronics, ST Microelectronics, Texas Instruments, Oki Electric. |
| Segments Covered | • By Product |
| Customization Scope | Free report customization (equivalent to up to 3 analyst working days) with purchase. Addition or alteration to country, regional & segment scope |
Key Points Covered in the Report
- Market Revenue of High Electron Mobility Transistor (HEMT) Market from 2021 to 2030.
- Market Forecast for High Electron Mobility Transistor (HEMT) Market from 2021 to 2030.
- Regional Market Share and Revenue from 2021 to 2030.
- Country Market share within region from 2021 to 2030.
- Key Type and Application Revenue and forecast.
- Company Market Share Analysis, High Electron Mobility Transistor (HEMT) competitive scenario, ranking, and detailed company
profiles. - Market driver, restraints, and detailed COVID-19 impact on High Electron Mobility Transistor (HEMT)
Market
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global High Electron Mobility Transistor (HEMT) market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, High Electron Mobility Transistor (HEMT) market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
Ampleon, Mitsubishi Electric, Fujitsu, TOSHIBA, Infineon, Renesas Electronics, Cree, Qorvo, Microsemi, Wolfspeed, Lake Shore Cryotronics, ST Microelectronics, Texas Instruments, Oki Electric.
Primary Target Market
- Market Players of High Electron Mobility Transistor (HEMT)
- Investors
- End-users
- Government Authorities
- Consulting And Research Firm
- Venture capitalists
- Third-party knowledge providers
- Value-Added Resellers (VARs)
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2030. Spherical Insights has segmented the global High Electron Mobility Transistor (HEMT) market based on the below-mentioned segments:
Global High Electron Mobility Transistor (HEMT) Market, By Type
- Gallium Nitride (GaN)
- Silicon Carbide (SiC)
- Gallium Arsenide (GaAs)
Global High Electron Mobility Transistor (HEMT) Market, By End User
- Consumer Electronics
- Automotive
- Industrial
- Aerospace & Defense,
- Others
Global High Electron Mobility Transistor (HEMT) market, Regional Analysis
- Europe: Germany, Uk, France, Italy, Spain, Russia, Rest of Europe
- The Asia Pacific: China,Japan,India,South Korea,Australia,Rest of Asia Pacific
- South America: Brazil, Argentina, Rest of South America
- Middle East & Africa: UAE, Saudi Arabia, Qatar, South Africa, Rest of Middle East & Africa
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