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The market size for next-generation memory was estimated at USD 5 billion in 2022, and it is expected to expand from USD 9.15 billion in 2023 to USD 16 billion by 2030, registering a CAGR of 32.00 percent between 2023 and 2030. The rising demand for efficient, faster, and more cost-effective memory solutions are the primary market drivers increasing the growth of the next-generation memory technologies market in recent years.
One of the key factors propelling the expansion of the next-generation memory market is the rising worldwide demand for business storage applications. Artificial intelligence (Ai), the Internet of Things (IoT), and big data, along with the growing demand for enterprise storage, fuel the market's expansion. These technologies all necessitate memory devices with high bandwidth, low power consumption, and high scalability. Next-generation infotainment and ADAS adoption, as well as the need for flexible memory solutions, are further factors driving the industry. The growth of end-use sectors, urbanization, and digitization, as well as the biotechnology industry's rapid ascent, all have a beneficial impact on the market for next-generation memory. In addition, from 2023 to 2030, market participants can expect lucrative prospects due to the increasing demand for emerging nonvolatile memory in connected devices and the use of nonvolatile memory in smartphones.
High-capacity, rapid storage memory is in high demand because of the proliferation of cloud storage services and the ever-increasing volume of data generated by enterprises. Many companies in the semiconductor sector attribute their success to the ever-increasing efficiency of their cutting-edge devices. Emerging non-volatile memories like RRAM, MRAM, FeRAM, and NRAM have been created to fulfill the demand for fast, low-power, and scalable memory devices. These technologies have more scalability, density, speed, and endurance than older ones. After a command is issued, most modern memory technologies take between 1 and 10 ns to produce results that meet or exceed expectations. After receiving a command, the memory must undergo a process known as "switching time" before it can begin fulfilling the request. The memory's read/write speeds benefit from a decrease in switching time.
The current manufacturing costs of high-bit-density next-generation memory are comparable to those of high-density DRAM and SRAM. Complex manufacturing procedures are often required for next-generation memory devices. Higher prices could result from the necessity of specialized tools, materials, and labor for these procedures. Next-generation memory technologies may have lower production yields in the beginning of development and manufacturing due to difficulties like errors, process variances, or materials challenges. A greater price per usable chip is the direct outcome of low yields. Advanced and costly materials could be required in the production of some forms of next-generation memory technology. Next-generation memory technologies may have longer manufacturing cycles and poorer throughput due to the complexity of their production methods.
The United States, Canada, and Mexico are included under "North America," "South America," "Europe," "Asia," and "the Rest of the World" are included under "Europe," "Turkey," "Russia," and "the Rest of the World" are included under "Asia," and "Japan," "China," "India," "South Korea," "Australia," "Singapore," "Malaysia," "Thailand," "Indonesia," The rapid pace of technological advancement and massive amounts of data generated by North American companies has made the continent the undisputed leader in the market for next-generation memory. The widespread usage of portable electronic devices like smartphones, tablets, and laptops in Asia and the Pacific bodes well for the region's economy between 2022 and 2029.
The global market has a strong need to meet the rising demand for storage applications from a wide range of businesses. End-users like BFSI are investing more heavily in Internet of Things (IoT) technologies, and the next-generation memory business is reaping the benefits. Next-generation memories, such as 3D Xpoint, are becoming widely used because they are faster than conventional solid-state drives. This is also a key factor propelling the Next-Generation Memory Market forward.
Businesses are expanding, and many organizations in the information technology sector are already using advanced forms of data storage. This growing need is a major factor in the development of cutting-edge storage services and tools. The established institutions' management of computing resources will likewise be shaped by this. Therefore, Next-Generation Memory-related factors have increased the global Next-Generation Memory market CAGR in recent years.
Report Coverage
Global Next Generation Non Volatile Memory research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global Next Generation Non Volatile Memory report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and Next Generation Non Volatile Memory competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key Next Generation Non Volatile Memory market players and analyses their core competencies in each global market sub-segments.
Key Points Covered in the Report
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global Next Generation Non Volatile Memory market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, Next Generation Non Volatile Memory market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
4DS Memory Limited, Adesto Technologies Corporation., Avalanche Technology, Cypress Semiconductor Corporation., Everspin Technologies Inc., FUJITSU, IBM Corporation, Microchip Technology Inc., Nantero., SAMSUNG, Rambus, SK HYNIX INC., Spin Memory Inc., NXP Semiconductors., Toshiba CORPORATION, Texas Instruments Incorporated., Western Digital Corporation and Viking Technology, among others.
Primary Target Market
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2030. INFINITIVE DATA EXPERT has segmented the global Next Generation Non Volatile Memory market based on the below-mentioned segments:
Global Next Generation Non Volatile Memory Market, By Product
Nonvolatile Memories
Volatile Memories
Global Next Generation Non Volatile Memory market, By Application
Consumer Electronics
Manufacturing
IT and Telecommunication
Aerospace
Defense
Global Next Generation Non Volatile Memory market, Regional Analysis
One of the key factors propelling the expansion of the next-generation memory market is the rising worldwide demand for business storage applications. Artificial intelligence (Ai), the Internet of Things (IoT), and big data, along with the growing demand for enterprise storage, fuel the market's expansion. These technologies all necessitate memory devices with high bandwidth, low power consumption, and high scalability. Next-generation infotainment and ADAS adoption, as well as the need for flexible memory solutions, are further factors driving the industry. The growth of end-use sectors, urbanization, and digitization, as well as the biotechnology industry's rapid ascent, all have a beneficial impact on the market for next-generation memory. In addition, from 2023 to 2030, market participants can expect lucrative prospects due to the increasing demand for emerging nonvolatile memory in connected devices and the use of nonvolatile memory in smartphones.
High-capacity, rapid storage memory is in high demand because of the proliferation of cloud storage services and the ever-increasing volume of data generated by enterprises. Many companies in the semiconductor sector attribute their success to the ever-increasing efficiency of their cutting-edge devices. Emerging non-volatile memories like RRAM, MRAM, FeRAM, and NRAM have been created to fulfill the demand for fast, low-power, and scalable memory devices. These technologies have more scalability, density, speed, and endurance than older ones. After a command is issued, most modern memory technologies take between 1 and 10 ns to produce results that meet or exceed expectations. After receiving a command, the memory must undergo a process known as "switching time" before it can begin fulfilling the request. The memory's read/write speeds benefit from a decrease in switching time.
The current manufacturing costs of high-bit-density next-generation memory are comparable to those of high-density DRAM and SRAM. Complex manufacturing procedures are often required for next-generation memory devices. Higher prices could result from the necessity of specialized tools, materials, and labor for these procedures. Next-generation memory technologies may have lower production yields in the beginning of development and manufacturing due to difficulties like errors, process variances, or materials challenges. A greater price per usable chip is the direct outcome of low yields. Advanced and costly materials could be required in the production of some forms of next-generation memory technology. Next-generation memory technologies may have longer manufacturing cycles and poorer throughput due to the complexity of their production methods.
The United States, Canada, and Mexico are included under "North America," "South America," "Europe," "Asia," and "the Rest of the World" are included under "Europe," "Turkey," "Russia," and "the Rest of the World" are included under "Asia," and "Japan," "China," "India," "South Korea," "Australia," "Singapore," "Malaysia," "Thailand," "Indonesia," The rapid pace of technological advancement and massive amounts of data generated by North American companies has made the continent the undisputed leader in the market for next-generation memory. The widespread usage of portable electronic devices like smartphones, tablets, and laptops in Asia and the Pacific bodes well for the region's economy between 2022 and 2029.
The global market has a strong need to meet the rising demand for storage applications from a wide range of businesses. End-users like BFSI are investing more heavily in Internet of Things (IoT) technologies, and the next-generation memory business is reaping the benefits. Next-generation memories, such as 3D Xpoint, are becoming widely used because they are faster than conventional solid-state drives. This is also a key factor propelling the Next-Generation Memory Market forward.
Businesses are expanding, and many organizations in the information technology sector are already using advanced forms of data storage. This growing need is a major factor in the development of cutting-edge storage services and tools. The established institutions' management of computing resources will likewise be shaped by this. Therefore, Next-Generation Memory-related factors have increased the global Next-Generation Memory market CAGR in recent years.
Report Coverage
Global Next Generation Non Volatile Memory research report categorizes the market for global based on various segments and regions, forecasts revenue growth, and analyzes trends in each submarket. Global Next Generation Non Volatile Memory report analyses the key growth drivers, opportunities, and challenges influencing the global market. Recent market developments and Next Generation Non Volatile Memory competitive strategies such as expansion, product launch and development, partnership, merger, and acquisition have been included to draw the competitive landscape in the market. The report strategically identifies and profiles the key Next Generation Non Volatile Memory market players and analyses their core competencies in each global market sub-segments.
| REPORT ATTRIBUTES | DETAILS |
|---|---|
| Study Period | 2017-2030 |
| Base Year | 2022 |
| Forecast Period | 2022-2030 |
| Historical Period | 2017-2021 |
| Unit | Value (USD Billion) |
| Key Companies Profiled | 4DS Memory Limited, Adesto Technologies Corporation., Avalanche Technology, Cypress Semiconductor Corporation., Everspin Technologies Inc., FUJITSU, IBM Corporation, Microchip Technology Inc., Nantero., SAMSUNG, Rambus, SK HYNIX INC., Spin Memory Inc., NXP Semiconductors., Toshiba CORPORATION, Texas Instruments Incorporated., Western Digital Corporation and Viking Technology, among others. |
| Segments Covered | • By Product |
| Customization Scope | Free report customization (equivalent to up to 3 analyst working days) with purchase. Addition or alteration to country, regional & segment scope |
Key Points Covered in the Report
- Market Revenue of Next Generation Non Volatile Memory Market from 2021 to 2030.
- Market Forecast for Next Generation Non Volatile Memory Market from 2021 to 2030.
- Regional Market Share and Revenue from 2021 to 2030.
- Country Market share within region from 2021 to 2030.
- Key Type and Application Revenue and forecast.
- Company Market Share Analysis, Next Generation Non Volatile Memory competitive scenario, ranking, and detailed company
profiles. - Market driver, restraints, and detailed COVID-19 impact on Next Generation Non Volatile Memory
Market
Competitive Environment:
The research provides an accurate study of the major organisations and companies operating in the global Next Generation Non Volatile Memory market, along with a comparative evaluation based on their product portfolios, corporate summaries, geographic reach, business plans, Next Generation Non Volatile Memory market shares in specific segments, and SWOT analyses. A detailed analysis of the firms' recent news and developments, such as product development, inventions, joint ventures, partnerships, mergers and acquisitions, strategic alliances, and other activities, is also included in the study. This makes it possible to assess the level of market competition as a whole.
List of Major Market Participants
4DS Memory Limited, Adesto Technologies Corporation., Avalanche Technology, Cypress Semiconductor Corporation., Everspin Technologies Inc., FUJITSU, IBM Corporation, Microchip Technology Inc., Nantero., SAMSUNG, Rambus, SK HYNIX INC., Spin Memory Inc., NXP Semiconductors., Toshiba CORPORATION, Texas Instruments Incorporated., Western Digital Corporation and Viking Technology, among others.
Primary Target Market
- Market Players of Next Generation Non Volatile Memory
- Investors
- End-users
- Government Authorities
- Consulting And Research Firm
- Venture capitalists
- Third-party knowledge providers
- Value-Added Resellers (VARs)
Market Segment:
This study forecasts global, regional, and country revenue from 2019 to 2030. INFINITIVE DATA EXPERT has segmented the global Next Generation Non Volatile Memory market based on the below-mentioned segments:
Global Next Generation Non Volatile Memory Market, By Product
Nonvolatile Memories
Volatile Memories
Global Next Generation Non Volatile Memory market, By Application
Consumer Electronics
Manufacturing
IT and Telecommunication
Aerospace
Defense
Global Next Generation Non Volatile Memory market, Regional Analysis
- Europe: Germany, Uk, France, Italy, Spain, Russia, Rest of Europe
- The Asia Pacific: China,Japan,India,South Korea,Australia,Rest of Asia Pacific
- South America: Brazil, Argentina, Rest of South America
- Middle East & Africa: UAE, Saudi Arabia, Qatar, South Africa, Rest of Middle East & Africa
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